3DD5036P - CASE-RATED BIPOLAR TRANSISTOR

JILIN SINO

General Description

of Changes 2015-7-1 201109A 201607B IC ：201507B 5/5

Key Features

3DD5036P NPN.
3DD5036P is high breakdown ， voltage of NPN bipolar transistor. ：、, The main process of manufacture: high voltage planar process, triple 。 diffused process etc. , adoption of （RoHS）。 fully plastic packge. RoHS product. ENT.

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3DD5036P case-rated bipolar transistor by JILIN SINO - Datasheet Preview

Datasheet Details

Part number	3DD5036P
Manufacturer	JILIN SINO
File Size	237.35 KB
Description	CASE-RATED BIPOLAR TRANSISTOR
Datasheet	3DD5036P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5036P FOR LOW FREQUENCY R 3DD5036P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) tf 1500 V 10 A 3 V(max) 0.6 μs(max) ● APPLICATIONS ● Horizontal deflection output for color TV. BCE FEATURES ●3DD5036P NPN ●3DD5036P is high breakdown ， voltage of NPN bipolar transistor. ：、, The main process of manufacture: high voltage planar process, triple 。 diffused process etc., adoption of （RoHS）。 fully plastic packge. RoHS product.