3DD157
ETC
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Low-frequency silicon npn power transistor.
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3DD15 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·DC Current Gain-
: hFE= 30~250(Min.)@IC= 2A.
3DD1545 - NPN Transistor
(Huajing Microelectronics)
1
3DD1545 NPN
,
21
3DD1545
2
2.1
2.2
TO-3P(H)IS
Tamb= 25
-
Ta=25 Tc=25
VCE0
600
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VCB0
1500
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VEB0
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3DD155 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain
: hFE= 15-120@IC= 1A ·Collector-Emitter Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC= 1.
3DD1555 - CASE-RATED BIPOLAR TRANSISTOR
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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY
R
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BVCBO IC VCE(sat) tf
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P.
3DD1555A - CASE-RATED BIPOLAR TRANSISTOR
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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555A FOR LOW FREQUENCY
R
3DD1555A
MAIN CHARACTERISTICS
BVCBO IC VCE(sat) tf
1500 V 8A 3 V(max) 0.6 s(max.
3DD1555P - CASE-RATED BIPOLAR TRANSISTOR
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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555P FOR LOW FREQUENCY
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3DD1555P
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Package TO-3P(H)IS
BVCBO IC VCE(sat) tf
1500 .
3DD159A - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD159A
DESCRIPTION ·With TO-3 packaging ·Large collector current .
3DD159B - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DD159B
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation .
3DD159C - NPN Transistor
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DD159C
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation .
3DD159D - NPN Transistor
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isc Silicon NPN Power Transistor
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3DD159D
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation .
