3DD2102

Part number:

3DD2102

Manufacturer:

ETC

File Size:

191.95 KB

Description:

Low-frequency amplification shell rated bipolar transistors.
DataSheet.in R ：200705B 3DD2102 ： 2007.5.29 DataSheet.in R '' Ԣᬒ໻ㅵ໇ᅮⱘঠᵕൟ᱊ԧㅵ D.
ѻક⡍ᗻ ƹय़:Vcbo=1500V ƹ੠य़Ԣ:Vce(sat)=5V(max.) ƹᓔ݇ᑺ:tf=16PD[ ƹৃᗻ ƹ TO-3P(H)IS 1. ෎ᵕ 2. ⬉ᵕ 3. থᇘᵕ.

3DD2101 Datasheet PDF

3DD2101, Jilin Sino
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2101 FOR LOW FREQUENCY R 3DD2101 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 900 V 5A 0.5 V(max) 0.5 s(max).

3DD2102 Datasheet PDF

3DD2102, Jilin Sino
R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼ÐÍ¾§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2102 FOR LOW FREQUENCY 3DD2102 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃÍ¾ z ²ÊÉ«µçÊÓ»úÐ.

3DD2102 Datasheet PDF

3DD2102, Huajing Microelectronics
NPN ○R 3DD2102 1 ： 3DD2102 NPN ，，，、。：TO-3P(H)IS， RoHS 。 VCBO IC Ptot（TC=25℃） 1500 6 50 2 ： ● TO-3P(H)IS ● ● ● ● 3 ： 21 。 1 2 1.B.

3DD2103 Datasheet PDF

3DD2103, Jilin Sino
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2103 FOR LOW FREQUENCY R 3DD2103 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 900 V 6A 0.5 V(max) 0.5 s(max).

3DD200 Datasheet PDF

3DD200, Inchange
isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD200 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current .

3DD200D Datasheet PDF

3DD200D, INCHANGE
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 8A ·Low Saturation Voltage- : VCE(.

3DD201 Datasheet PDF

3DD201, Inchange
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·DC Current Gain- : hFE= 40~120(Min.)@IC= 2.

3DD202A Datasheet PDF

3DD202A, INCHANGE
isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD202A DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation .

Low-frequency amplification shell rated bipolar transistors

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3DD2102 Distributor