3DD13009
ETC
38.92 KB
Silicon npn transistor.
1
3DD13009 NPN
3DD13009
2
2.1
2.2
TO-220F
Tamb= 25
-
Ta=25 Tc=25
VCE0 VCB0 VEB0
IC
Ptot
Tj Tstg
400 700 9 12 2 100 150 -55 150
V V V A
W
Tamb.
📁 Related Datasheet
3DD13001 - High Voltage Fast Switching NPN Power Transistor
(GME)
Production specification
High Voltage Fast Switching NPN Power Transistor 3DD13001
FEATURES
PC=350mW(Mounted on ceramic substrate). Pb
High sp.
3DD13001 - TRANSISTOR
(Jiangsu Changjiang Electronics)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13001
TRANSISTOR£¨NPN £©
TO¡ª 92
FEATURES Power dissip.
3DD13001 - Plastic-Encapsulated Transistors
(TRANSYS Electronics)
Transys
Electronics
L I M I T E D
TO-251 Plastic-Encapsulated Transistors
3DD13001
FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃)
1. BASE 2. COLLEC.
3DD13001 - NPN Transistor
(SeCoS)
3DD13001
Elektronische Bauelemente 0.2A , 600V NPN Plastic-Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-f.
3DD13001 - NPN Transistors
(Kexin)
SMD Type
NPN Transistors 3DD13001
Transistors
■ Features
● Collector-emitter Voltage: V(BR)CEO=400V ● Collector Current: IC=0.2A
1.70 0.1
0.42 0..
3DD13001 - NPN Transistor
(WEJ)
.
3DD13001A - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
(JILIN SINO-MICROELECTRONICS)
R
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13001A
IC VCEO PC(TO-92)
MAIN CHARACTERISTICS
0.8A 400V 1W
Package
z z z z z
.
3DD13001A1 - Silicon NPN Transistor
(Huajing Microelectronics)
NPN
3DD13001 A1
○R
3DD13001 A1 NPN ， ， ， 、 。
● ● ● ● ●
● ● ●
VCEO IC
Ptot （Ta=25℃）
400 0.25 0.8
V A W
TO-92
-10℃.
