3DD13009
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Silicon npn transistor.
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3DD13001 - High Voltage Fast Switching NPN Power Transistor
(GME)
Production specification
High Voltage Fast Switching NPN Power Transistor 3DD13001
FEATURES
PC=350mW(Mounted on ceramic substrate). Pb
High sp.
3DD13001 - TRANSISTOR
(Jiangsu Changjiang Electronics)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13001
TRANSISTOR£¨NPN £©
TO¡ª 92
FEATURES Power dissip.
3DD13001 - Plastic-Encapsulated Transistors
(TRANSYS Electronics)
Transys
Electronics
L I M I T E D
TO-251 Plastic-Encapsulated Transistors
3DD13001
FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃)
1. BASE 2. COLLEC.
3DD13001 - NPN Transistor
(SeCoS)
3DD13001
Elektronische Bauelemente 0.2A , 600V NPN Plastic-Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-f.
3DD13001 - NPN Transistors
(Kexin)
SMD Type
NPN Transistors 3DD13001
Transistors
■ Features
● Collector-emitter Voltage: V(BR)CEO=400V ● Collector Current: IC=0.2A
1.70 0.1
0.42 0..
3DD13001 - NPN Transistor
(WEJ)
.
3DD13001A - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
(JILIN SINO-MICROELECTRONICS)
R
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13001A
IC VCEO PC(TO-92)
MAIN CHARACTERISTICS
0.8A 400V 1W
Package
z z z z z
.
3DD13001A1 - Silicon NPN Transistor
(Huajing Microelectronics)
NPN
3DD13001 A1
○R
3DD13001 A1 NPN ， ， ， 、 。
● ● ● ● ●
● ● ●
VCEO IC
Ptot （Ta=25℃）
400 0.25 0.8
V A W
TO-92
-10℃.
3DD13001B - TO-92 Plastic-Encapsulate Transistors
(JCST)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13001B TRANSISTOR (NPN)
FEATURE · power switching applica.
3DD13001H - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
(JILIN SINO-MICROELECTRONICS)
R
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13001H
IC VCEO PC(TO-92)
MAIN CHARACTERISTICS
0.75A 400V 1W
Package
z z z z z
.
