3DD2553
ETC
125.17kb
Npn transistor.
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3DD2553 - CASE-RATED BIPOLAR TRANSISTOR
(JILIN SINO)
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2553 FOR LOW FREQUENCY
R
3DD2553
MAIN CHARACTERISTICS
BVCBO IC VCE(sat) tf
1700 V 8A 4 V(max) 0.7 s(max)
.
3DD2539 - Silicon NPN Bipolar Transistor
(Huajing Microelectronics)
NPN
○R
3DD2539
1 ：
3DD2539 NPN ，， ，、
。
：TO-3P(H)IS， RoHS 。
VCBO IC Ptot（TC=25℃）
1500 7 50
2 ：
●
TO-3P(H)IS
● ● ● ●
3 ：
29 。
1 2
1.B.
3DD200 - Silicon Power Transistor
(Inchange)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DD200
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.) ·DC Current .
3DD200D - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 8A ·Low Saturation Voltage-
: VCE(.
3DD201 - Silicon Power Transistor
(Inchange)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.) ·DC Current Gain-
: hFE= 40~120(Min.)@IC= 2.
3DD202A - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DD202A
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation .
3DD202B - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DD202B
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation .
3DD207 - Silicon NPN Power Transistors
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DD207
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation v.
3DD2073 - NPN Transistor
(ETC)
3DD2073 NPN
PCM
ICM
Tjm
Tstg
Rth
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VBEsat
VCEsat
hFE
Tc=25℃
VCE=10V IC=0.8A ICB=1m.
3DD207I - Silicon NPN Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD207i
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)C.
