3DD2499
ETC
124.36kb
Low-frequency amplification case - rated bipolar transistors.
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3DD2498 - NPN Transistor
(ETC)
..
3DD2498
1.
3DD2498 NPN , 21 ， 。： ● 、 ● ● ● ● ：TO-3P(H)IS
2.
2.1 ，Tamb= 25℃ - VCE0 - VCB0 - VEB0 IC Ta=25℃ .
3DD200 - Silicon Power Transistor
(Inchange)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DD200
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.) ·DC Current .
3DD200D - NPN Transistor
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isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 8A ·Low Saturation Voltage-
: VCE(.
3DD201 - Silicon Power Transistor
(Inchange)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.) ·DC Current Gain-
: hFE= 40~120(Min.)@IC= 2.
3DD202A - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DD202A
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation .
3DD202B - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DD202B
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation .
3DD207 - Silicon NPN Power Transistors
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DD207
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation v.
3DD2073 - NPN Transistor
(ETC)
3DD2073 NPN
PCM
ICM
Tjm
Tstg
Rth
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VBEsat
VCEsat
hFE
Tc=25℃
VCE=10V IC=0.8A ICB=1m.
3DD207I - Silicon NPN Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD207i
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)C.
3DD208 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.) ·DC Current Gain-
: hFE= 30~250(Min.)@IC= 0.
