3DD207I Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD207i .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

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Datasheet Specifications

Part number: 3DD207I
Manufacturer: Inchange Semiconductor
File Size: 145.74 KB
Datasheet: 3DD207I-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for auto amplifier application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 5A PC Collector Power Dissipation@TC=75℃ 50

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3DD207I Silicon NPN Power Transistor Inchange Semiconductor

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