3DD207I Datasheet, transistor equivalent, Inchange Semiconductor

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Part number: 3DD207I

Manufacturer: Inchange Semiconductor

File Size: 145.74KB

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Description: Silicon NPN Power Transistor

Datasheet Preview: 3DD207I 📥 Download PDF (145.74KB)

3DD207I Application


*Designed for auto amplifier application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO C.

3DD207I Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.)
*Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 3A APPLICATIONS
*Designed for auto amplifier application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER.

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TAGS

3DD207I
Silicon
NPN
Power
Transistor
Inchange Semiconductor

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