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3DD207I Datasheet - Inchange Semiconductor

3DD207I Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 3A APPLICATIONS *Designed for auto amplifier application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V.

3DD207I-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

3DD207I

Manufacturer:

Inchange Semiconductor

File Size:

145.74 KB

Description:

Silicon npn power transistor.

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3DD207I 3DD207I Silicon NPN Power Transistor Inchange Semiconductor