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ST 2SA1270 PNP Silicon Epitaxial Planar Transistor for switching and general purpose applications. The transistor is subdivided into two groups O and

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FJNS4202R FJNS4202R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias R

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SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • Complimentary to SS8550 Ε Collecto

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Production specification Silicon Epitaxial Planar Transistor FEATURES  High Collector Current.(IC= 500mA).  Complementary To S8550. Pb Lead-free

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD718 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB688 APP

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4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS

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TIC226 SERIES SILICON TRIACS 8 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1 - 3) This series is curren

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SavantIC Semiconductor Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type TIP42/42A/42B/42C APPLICATIONS ·For mediu

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Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr

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www.DataSheet4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com

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2381 58. /VDRH E Vishay BCcomponents www.DataSheet4U.com High Surge Suppression Varistors The encapsulation is made of flammable resista

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RTV31, RTV60, RTV88 Technical Data Sheet Silicone Rubber Compounds for High Temperature Product Description RTV31, RTV60 and RTV88 silicone rubber

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Silicon Controlled Rectifier 2N2323, 2N2324, 2N2326, 2N2328 & 2N2329 2N2323S, 2N2324S, 2N2326S, 2N2328S & 2N2329S 2N2323A, 2N2324A, 2N2326A & 2N2328A,

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isc Silicon NPN Power Transistor KTC2020D DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 60V(Min) ·High Switching Speed ·High Reliability ·Minimum

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www.vishay.com VS-1N1 A, VS-1N36..A Series Vishay Semiconductors Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A DO-4 (DO-203AA) PRI

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BAM80 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BAM80 is Designed for VHF AM power amplifier Applications in the range of 100 to 150 MHz.

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TOSHIBA TC551001BPL/BFL/BFTL/BTRL-70/85/10 SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551 001 BPL is a 1,048,576 bit CMOS

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DTC114E SERIES Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transist

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RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Inte

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