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ST 2SA1270 PNP Silicon Epitaxial Planar Transistor for switching and general purpose applications. The transistor is subdivided into two groups O and

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD718 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB688 APP

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SavantIC Semiconductor Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type TIP42/42A/42B/42C APPLICATIONS ·For mediu

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Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr

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2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group acco

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Production specification Silicon Epitaxial Planar Transistor FEATURES  High Collector Current.(IC= 500mA).  Complementary To S8550. Pb Lead-free

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Si4825-A10 BROADCAST MECHANICAL TUNING AM/FM/SW RADIO RECEIVER Features  Worldwide FM band support (64–109 MHz)  Worldwide AM band support (504–1

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4207 Audio Frequency General Purpose Amplifier Applications 2SC4207 Unit: mm  Small

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PRELIMINARY VERSION nly R820T O High Performance Low Power Advanced Digital TV Silicon Tuner Datasheet orSuite 808, Building 53, No.195, Sec.4, Chung

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FJNS4202R FJNS4202R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias R

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383 Color TV Vertical Deflection Output Applications Color TV Class-B Sound Output App

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1223 DESCRIPTION ·With TO-220F package ·Compleme

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A733 PNP Epitaxial Silicon Transistor LOW FREQUENCY AMPLIFIER Collector-Emitter Voltage: VCEO=-50V Collector Dissipation: PC(max)=250mW Absolute Max

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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TIC226 SERIES SILICON TRIACS 8 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1 - 3) This series is curren

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SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • Complimentary to SS8550 Ε Collecto

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ST 2SC828 / 828A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three grou

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2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group acco

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2347 TV UHF Oscillator Applications TV VHF Mixer Applications 2SC2347 Unit: mm Maximum Ratin

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