| Part Number | Description | Manufacture |
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PNP Silicon Transistor ector Emitter Saturation Voltage at -IC=100mA,-IB=10mA Base Emitter Voltage at –VCE=1V,-IC=100mA Transition Frequency at -VCE=6V, -IC=20mA Collector Output Capacitance at -VCB=6V, f=1MHz hFE hFE hFE hFE -ICBO -IEBO -VCEsat -VBE fT COB 70 120 2 |
 SEMTECH |
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NPN Silicon Transistor |
SEMTECH |
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1.0A RECTIFIER • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF |
 Vishay Siliconix |
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Silicon NPN Power Transistors ion voltage IC=5A; IB=0.5A VBE Base-emitter voltage IC=5A ; VCE=5V ICBO Collector cut-off current VCB=120V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=1A ; VCE=5V fT Transition frequency IC=1A ; VCE=5V Cob Output |
 SavantIC |
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Silicon NPN Transistor nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please de |
 Toshiba Semiconductor |
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Silicon NPN Transistor High Collector Current.(IC= 500mA). Complementary To S8550. Pb Lead-free Excellent HFE Linearity. High total power dissipation.(PC=300mW). S8050 APPLICATIONS High Collector Current.. ORDERING INFORMATION Type No. Marking S8050 J3Y |
 GME |
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SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS * Fast switching PARTMARKING DETAILS FMMT2222 1BZ FMMT2222A 1P FMMT2222R 2P FMMT2222AR 3P COMPLEMENTARY TYPES FMMT2222 FMMT2907 FMMT2222A FMMT2907A FMMT2222 FMMT2222A C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Coll |
 ETC |
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Silicon NPN Power Transistors |
SavantIC |
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Silicon NPN Transistor hin the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test |
Toshiba Semiconductor |
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NPN Epitaxial Silicon Transistor IE=1mA, IC=0 VCB=700V, IE=0 VCE=400V, IB=0 VEB=9V, IC=0 VCE=2V, IC=0.5A VCE=10V, IC=0.5mA IC=1A IB=250mA IC=1A, IB=250mA IE=2A VCE=10V, IC=100mA f=1MHz IC=1A, IB1=-1B2=0.2mA, Vcc= 100V 5 0.5 2.5 MHz µS µS 8 5 1 1.2 3 V V V Min 700 400 9 1 500 1 40 M |
 Elite Enterprises |
| Total 85308 results |
