3DD56 Datasheet | Specifications & PDF Download

R CASE-RATED BIPOLAR TRANSISTOR 3DD5606 FOR LOW FREQUENCY AMPLIFICATION 3DD5606 BVCBO IC PC MAIN CHARACTERISTICS 1600V 6A 60W Package TO-220

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD5601（I/U/M） IC VCEO VCBO PC(TO-251/252) PC(TO-126) MAIN CHARACTERISTICS 1.0A 700V 1400V

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isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations fo

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD5603（I/U/M/Z） IC VCEO VCBO PC(TO-126) PC(TO-220) MAIN CHARACTERISTICS 1.5A 800V 1500V 2

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD5602（I/U/M） IC VCEO VCBO PC(TO-251/252) PC(TO-126) MAIN CHARACTERISTICS 1.0A 800V 1500V

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3DD56/3DD57 NPN ABCDE F PCM TC=75℃ 10 W ICM Tjm Tstg Rth VCE=10V IC=0.2A 3 175 -55~150 10 A ℃ ℃ ℃/W V(BR)CBO ICB=3mA ≥30 ≥50

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