3DD56/3DD57 NPN ABCDE F PCM TC=75℃ .
JILIN SINO-MICROELECTRONICS
3
3DD5603 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD5603（I/U/M/Z） IC VCEO VCBO PC(TO-126) PC(TO-220) MAIN CHARACTERISTICS 1.5A 800V 1500V 2.
INCHANGE
2
3DD5606 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations fo.
ETC
1
3DD56 - NPN silicon low-frequency high-power transistors
3DD56/3DD57 NPN ABCDE F PCM TC=75℃ 10 W ICM Tjm Tstg Rth VCE=10V IC=0.2A 3 175 -55~150 10 A ℃ ℃ ℃/W V(BR)CBO ICB=3mA ≥30 ≥50 .
JILIN SINO-MICROELECTRONICS
1
3DD5606 - CASE-RATED BIPOLAR TRANSISTOR
R CASE-RATED BIPOLAR TRANSISTOR 3DD5606 FOR LOW FREQUENCY AMPLIFICATION 3DD5606 BVCBO IC PC MAIN CHARACTERISTICS 1600V 6A 60W Package TO-220 .
JILIN SINO-MICROELECTRONICS
1
3DD5601 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD5601（I/U/M） IC VCEO VCBO PC(TO-251/252) PC(TO-126) MAIN CHARACTERISTICS 1.0A 700V 1400V.
JILIN SINO-MICROELECTRONICS
1
3DD5602 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD5602（I/U/M） IC VCEO VCBO PC(TO-251/252) PC(TO-126) MAIN CHARACTERISTICS 1.0A 800V 1500V.