3DD5606 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High breakdown voltage. High switching speed. High current capability. Minimum Lot-to-Lot variations for robust device performance an.

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Datasheet Specifications

Part number: 3DD5606
Manufacturer: INCHANGE
File Size: 205.52 KB
Datasheet: 3DD5606-INCHANGE.pdf
Description: NPN Transistor

Applications

* Energy-saving ligh
* Electronic ballasts
* High frequency switching power supply
* High frequency power transform ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 1600 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Volt

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3DD5606 NPN Transistor INCHANGE

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