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3DD5011, 3DD5011-JILINSINO CASE-RATED BIPOLAR TRANSISTOR

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Description

CASE-RATED BIPOLAR TRANSISTOR 3DD5011 FOR LOW FREQUENCY AMPLIFICATION R 3DD5011 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 900V 10 A 0.5 V(max) 0..
of Changes :201504A 5/5.

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This datasheet PDF includes multiple part numbers: 3DD5011, 3DD5011-JILINSINO. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
3DD5011, 3DD5011-JILINSINO
Manufacturer
JILIN SINO-MICROELECTRONICS
File Size
229.04 KB
Datasheet
3DD5011-JILINSINO-MICROELECTRONICS.pdf
Description
CASE-RATED BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: 3DD5011, 3DD5011-JILINSINO.
Please refer to the document for exact specifications by model.

Features

* 123 z3DD5011 NPN z 3DD5011 is high breakdown , voltage of NPN bipolar transistor. EQUIVALENT CIRCUIT The main process of manufacture: : high voltage planar technology, 、, triple diffused process etc. , 。 adoption of fully plastic packge. (RoHS)。 RoHS product. ORDER MESSAGE Order codes

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