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3DD5011, 3DD5011-JILINSINO Datasheet - JILIN SINO-MICROELECTRONICS

3DD5011, 3DD5011-JILINSINO, CASE-RATED BIPOLAR TRANSISTOR

CASE-RATED BIPOLAR TRANSISTOR 3DD5011 FOR LOW FREQUENCY AMPLIFICATION R 3DD5011 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 900V 10 A 0.5 V(max) 0.
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Features

* 123 z3DD5011 NPN z 3DD5011 is high breakdown ， voltage of NPN bipolar transistor. EQUIVALENT CIRCUIT The main process of manufacture: ： high voltage planar technology, 、, triple diffused process etc. , 。 adoption of fully plastic packge. （RoHS）。 RoHS product. ORDER MESSAGE Order codes

3DD5011-JILINSINO-MICROELECTRONICS.pdf

This datasheet PDF includes multiple part numbers: 3DD5011, 3DD5011-JILINSINO. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

3DD5011, 3DD5011-JILINSINO

Manufacturer:

JILIN SINO-MICROELECTRONICS

File Size:

229.04 KB

Description:

Case-rated bipolar transistor.

Note:

This datasheet PDF includes multiple part numbers: 3DD5011, 3DD5011-JILINSINO.
Please refer to the document for exact specifications by model.

3DD5011 Distributors

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