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3DD5011, 3DD5011-JILINSINO CASE-RATED BIPOLAR TRANSISTOR

3DD5011 Description

CASE-RATED BIPOLAR TRANSISTOR 3DD5011 FOR LOW FREQUENCY AMPLIFICATION R 3DD5011 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 900V 10 A 0.5 V(max) 0..
of Changes ：201504A 5/5.

3DD5011 Features

* 123 z3DD5011 NPN z 3DD5011 is high breakdown ， voltage of NPN bipolar transistor. EQUIVALENT CIRCUIT The main process of manufacture: ： high voltage planar technology, 、, triple diffused process etc. , 。 adoption of fully plastic packge. （RoHS）。 RoHS product. ORDER MESSAGE Order codes

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This datasheet PDF includes multiple part numbers: 3DD5011, 3DD5011-JILINSINO. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
3DD5011, 3DD5011-JILINSINO
Manufacturer
JILIN SINO-MICROELECTRONICS
File Size
229.04 KB
Datasheet
3DD5011-JILINSINO-MICROELECTRONICS.pdf
Description
CASE-RATED BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: 3DD5011, 3DD5011-JILINSINO.
Please refer to the document for exact specifications by model.

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CASE-RATED BIPOLAR TRANSISTOR JILIN SINO-MICROELECTRONICS
JILIN SINO-MICROELECTRONICS 3DD5011-like datasheet