* 123
* 3DD5023P NPN
* 3DD5023P is high breakdown EQUIVALENT CIRCUIT ， voltage of NPN bipolar transistor. ： The main process of manufacture: 、, high voltage planar process, triple 。 diffused process etc., adoption of （RoHS）。 fully plastic packge. RoHS product. RBE=50Ω(Typ.) O
3DD5023P Datasheet (313.42 KB)
3DD5023P
JILIN SINO
313.42 KB
Case-rated bipolar transistor.
R CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY
3DD5023P
MAIN CHARACTERISTICS
BVCBO IC VCE(sat) tf
1500 V 6A 5 V(max) 1 μs(max.
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