3DD5023P Datasheet - JILIN SINO

3DD5023P, CASE-RATED BIPOLAR TRANSISTOR

R CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY 3DD5023P MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 6A 5 V(max) 1 μs(max

Features

* 123
* 3DD5023P NPN
* 3DD5023P is high breakdown EQUIVALENT CIRCUIT ， voltage of NPN bipolar transistor. ： The main process of manufacture: 、, high voltage planar process, triple 。 diffused process etc. , adoption of （RoHS）。 fully plastic packge. RoHS product. RBE=50Ω(Typ. ) O

3DD5023P-JILINSINO.pdf