* z 3DD5024PNPN z 3DD5024P is high breakdown ， voltage of NPN bipolar ： transistor.The main process of 、 manufacture:high voltage planar , process,triple diffused process 。（RoHS）。 etc.,adoption of fully plastic packge.RoHS product. EQUIVALENT CIRCUIT RBE=50Ω(Typ.) ORDER MESSAGE Order cod
3DD5024P Datasheet (223.52 KB)
3DD5024P
JILIN SINO
223.52 KB
Case-rated bipolar transistor.
CASE-RATED BIPOLAR TRANSISTOR 3DD5024P FOR LOW FREQUENCY AMPLIFICATION
R
3DD5024P
MAIN CHARACTERISTICS
BVCBO IC VCE(sat) tf
1500V 8.0 A 3.0V(max).
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