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3SK297 Datasheet, Features, Application

3SK297 Silicon N-Channel Dual Gate MOS FET

3SK297 Silicon N-Channel Dual Gate MOS FET ADE-20.

Hitachi Semiconductor

3SK297 - Silicon N-Channel Dual Gate MOS FET

 3SK297 Silicon N-Channel Dual Gate MOS FET ADE-208-389 1st. Edition Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ.
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