3SK297 Overview
3SK297 Silicon N-Channel Dual Gate MOS FET ADE-208-389 1st. Edition Application UHF / VHF RF amplifier.
3SK297 Key Features
- Low noise figure. NF = 1.0 dB typ. at f = 200 MHz
- Capable of low voltage operation
Datasheet Details
| Part number | 3SK297 |
|---|---|
| Datasheet | 3SK297_HitachiSemiconductor.pdf |
| File Size | 54.84 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | Silicon N-Channel Dual Gate MOS FET |
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