3SK295 Overview
3SK295 Silicon N-Channel Dual Gate MOS FET ADE-208-387 1st. Edition Application UHF RF amplifier.
3SK295 Key Features
- Low noise figure. NF = 2.0 dB typ. at f = 900 MHz
- Capable of low voltage operation
Datasheet Details
| Part number | 3SK295 |
|---|---|
| Datasheet | 3SK295_HitachiSemiconductor.pdf |
| File Size | 51.38 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | Silicon N-Channel Dual Gate MOS FET |
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