3SK295 Description
3SK295 Silicon N-Channel Dual Gate MOS FET ADE-208-387 1st. Edition Application UHF RF amplifier.
3SK295 Key Features
- Low noise figure. NF = 2.0 dB typ. at f = 900 MHz
- Capable of low voltage operation
- Part: 3SK295
- Manufacturer: Hitachi Semiconductor
- Size: 51.38 KB
Related Hitachi Semiconductor Datasheets
| Part Number | Description |
|---|---|
| 3SK290 | Silicon N-Channel Dual Gate MOS FET |
| 3SK296 | Silicon N-Channel Dual-Gate MOSFET |
| 3SK297 | Silicon N-Channel Dual Gate MOS FET |
| 3SK298 | Silicon N-Channel Dual Gate MOS FET |
| 3SK228 | Silicon NPN Triple Diffused |