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3SK295 - Silicon N-Channel Dual Gate MOS FET

Key Features

  • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz.
  • Capable of low voltage operation Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK295 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 150 150.
  • 55 to +150 Unit V V V mA mW °C °C Attention: This devi.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
3SK290 Silicon N-Channel Dual Gate MOS FET
3SK296 Silicon N-Channel Dual-Gate MOSFET
3SK297 Silicon N-Channel Dual Gate MOS FET
3SK298 Silicon N-Channel Dual Gate MOS FET
3SK228 Silicon NPN Triple Diffused

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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3SK295 Silicon N-Channel Dual Gate MOS FET ADE-208-387 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK295 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 150 150 –55 to +150 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor.