3SK290 Overview
3SK290 Silicon N-Channel Dual Gate MOS FET ADE-208-271 1st. Edition Application UHF RF amplifier.
3SK290 Key Features
- Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz
- High gain. PG = 19.3 dB Typ. at f = 900 MHz
Datasheet Details
| Part number | 3SK290 |
|---|---|
| Datasheet | 3SK290_HitachiSemiconductor.pdf |
| File Size | 90.76 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | Silicon N-Channel Dual Gate MOS FET |
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