3SK290
3SK290 is Silicon N-Channel Dual Gate MOS FET manufactured by Hitachi Semiconductor.
Silicon N-Channel Dual Gate MOS FET
ADE-208-271 1st. Edition
Application
UHF RF amplifier
Features
- Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz
- High gain. PG = 19.3 dB Typ. at f = 900 MHz
Outline
CMPAK- 4
2 3 4 1 1. Source 2. Gate1 3. Gate2 4....
