3SK290 Description
3SK290 Silicon N-Channel Dual Gate MOS FET ADE-208-271 1st. Edition Application UHF RF amplifier.
3SK290 Key Features
- Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz
- High gain. PG = 19.3 dB Typ. at f = 900 MHz
- Part: 3SK290
- Manufacturer: Hitachi Semiconductor
- Size: 90.76 KB
Related Hitachi Semiconductor Datasheets
| Part Number | Description |
|---|---|
| 3SK295 | Silicon N-Channel Dual Gate MOS FET |
| 3SK296 | Silicon N-Channel Dual-Gate MOSFET |
| 3SK297 | Silicon N-Channel Dual Gate MOS FET |
| 3SK298 | Silicon N-Channel Dual Gate MOS FET |
| 3SK228 | Silicon NPN Triple Diffused |