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3SK290 - Silicon N-Channel Dual Gate MOS FET

Key Features

  • Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz.
  • High gain. PG = 19.3 dB Typ. at f = 900 MHz Outline CMPAK.
  • 4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK290 Absolute Maximum Ratings (Ta = 25¡C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 100 125.
  • 55 to +125 Unit V V V mA mW °C °C Attention:.

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3SK295 Silicon N-Channel Dual Gate MOS FET
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3SK290 Silicon N-Channel Dual Gate MOS FET ADE-208-271 1st. Edition Application UHF RF amplifier Features · Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz · High gain. PG = 19.3 dB Typ. at f = 900 MHz Outline CMPAK–4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK290 Absolute Maximum Ratings (Ta = 25¡C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 100 125 –55 to +125 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor.