3SK298 Silicon N-Channel Dual Gate MOS FET ADE-20.
Hitachi Semiconductor
3SK298 - Silicon N-Channel Dual Gate MOS FET
3SK298 Silicon N-Channel Dual Gate MOS FET ADE-208-390 1st. Edition Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ.
