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3SK298

Silicon N-Channel Dual Gate MOS FET

3SK298 Features

* Low noise figure. NF = 1.0 dB typ. at f = 200 MHz

* Capable of low voltage operation Outline CMPAK

* 4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK298 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Dr

3SK298 Datasheet (54.85 KB)

Preview of 3SK298 PDF

Datasheet Details

Part number:

3SK298

Manufacturer:

Hitachi Semiconductor

File Size:

54.85 KB

Description:

Silicon n-channel dual gate mos fet.

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3SK298 Silicon N-Channel Dual Gate MOS FET Hitachi Semiconductor

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