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3SK207 Datasheet - Toshiba Semiconductor

3SK207 Silicon N Channel Dual Gate MOS Type FET

3SK207 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK207 TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance. Low reverse transfer capacitance: Crss = 0.015 pF (typ.) Low noise figure: NF = 1.9dB (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VG1S VG2.

3SK207_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

3SK207

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

180.85 KB

Description:

Silicon n channel dual gate mos type fet.

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3SK207 3SK207 Silicon Channel Dual Gate MOS Type FET Toshiba Semiconductor

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