3SK222 Datasheet - NEC

3SK222 N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

3SK222 Features

* The Characteristic of Cross-Modulation is good. CM = 92 dBµ TYP. @ f = 200 MHz, GR =

* 30 dB PACKAGE DIMENSIONS (Unit: mm) 0.4 +0.1

* 0.05 1.5 +0.2

* 0.1 2.8 +0.2

* 0.3

* Low Noise Figure:

* High Power Gain:

* Enhancement Type. NF1 = 1

Datasheet Details

3SK222

NEC

58.20 KB

N-channel si dual gate mos field-effect transistor.

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