3SK222 N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

NEC

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK222 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS M.

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Datasheet Specifications

Part number: 3SK222
Manufacturer: NEC
File Size: 58.20 KB
Datasheet: 3SK222_NEC.pdf
Description: N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

Features

* The Characteristic of Cross-Modulation is good. CM = 92 dBµ TYP. @ f = 200 MHz, GR =
* 30 dB PACKAGE DIMENSIONS (Unit: mm) 0.4 +0.1
* 0.05 1.5 +0.2
* 0.1 2.8 +0.2
* 0.3
* Low Noise Figure:
* High Power Gain:
* Enhancement Type. NF1 = 1

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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3SK222 N-CHANNEL DUAL GATE MOS FIELD-EFFECT TRANSISTOR NEC

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