3SK223 N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

NEC

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATU.

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Datasheet Specifications

Part number: 3SK223
Manufacturer: NEC
File Size: 57.30 KB
Datasheet: 3SK223_NEC.pdf
Description: N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

Features

* The Characteristic of Cross-Modulation is good. CM = 101 dBµ TYP. @ f = 470 MHz, GR =
* 30 dB
* Low Noise Figure:
* High Power Gain:
* Enhancement Type. 2.9±0.2 (1.8) PACKAGE DIMENSIONS (Unit: mm) 2.8
* 0.3 +0.2 +0.2 +0.2 0.4
* 0.3 NF2 = 0.9

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

3SK223 Distributors

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3SK223 N-CHANNEL DUAL GATE MOS FIELD-EFFECT TRANSISTOR NEC

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