3SK223 Datasheet - NEC

3SK223 - N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

3SK223 Features

* The Characteristic of Cross-Modulation is good. CM = 101 dBµ TYP. @ f = 470 MHz, GR =

* 30 dB

* Low Noise Figure:

* High Power Gain:

* Enhancement Type. 2.9±0.2 (1.8) PACKAGE DIMENSIONS (Unit: mm) 2.8

* 0.3 +0.2 +0.2 +0.2 0.4

* 0.3 NF2 = 0.9

Datasheet Details

3SK223

NEC

57.30 KB

N-channel si dual gate mos field-effect transistor.

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