3SK226
3SK226 is Silicon N Channel Dual Gate MOS Type FET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type
TV Tuner, VHF RF Amplifier Applications FM Tuner Applications
Unit: mm
- Superior cross modulation performance.
- Low reverse transfer capacitance: Crss = 0.015 p F (typ.)
- Low noise figure: NF = 1.1d B (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range
Symbol
VDS VG1S VG2S
ID PD Tch Tstg
Rating
13.5 ±8 ±8 30 150 125 -55~125
Unit
V V V m A m W °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-3J1A
Weight: 0.013 g (typ.)
Characteristics
Gate 1 leakage current Gate 2 leakage current Drain-source voltage Drain current Gate 1-source cut-off voltage Gate 2-source cut-off voltage
Forward transfer admittance
Input capacitance Reverse transfer capacitance Power gain Noise figure
Symbol
Test...
