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3SK226 Datasheet - Toshiba Semiconductor

3SK226 Silicon N Channel Dual Gate MOS Type FET

3SK226 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK226 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications Unit: mm Superior cross modulation performance. Low reverse transfer capacitance: Crss = 0.015 pF (typ.) Low noise figure: NF = 1.1dB (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature rang.

3SK226_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

3SK226

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

187.63 KB

Description:

Silicon n channel dual gate mos type fet.

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3SK226 3SK226 Silicon Channel Dual Gate MOS Type FET Toshiba Semiconductor