3SK225 - Silicon N Channel Dual Gate MOS Type FET
3SK225 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK225 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance.
Low noise figure: NF = 2.0dB (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VG1S VG2S
