3SK256 Datasheet - Toshiba Semiconductor

3SK256 - Silicon N Channel Dual Gate MOS Type FET

3SK256 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK256 TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance. Low reverse transfer capacitance: Crss = 0.015 pF (typ.) Low noise figure: NF = 1.9dB (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VG1S VG2.

3SK256_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

3SK256

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

207.53 KB

Description:

Silicon n channel dual gate mos type fet.

3SK256 Distributor

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3SK256 Silicon Channel Dual Gate MOS Type FET Toshiba Semiconductor