3SK256 Silicon N Channel Dual Gate MOS Type FET

Toshiba Semiconductor

Description

3SK256 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK256 TV Tuner, UHF RF Amplifier Applications Unit: mm * Superior .

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Datasheet Specifications

Part number: 3SK256
Manufacturer: Toshiba ↗ Semiconductor
File Size: 207.53 KB
Datasheet: 3SK256_ToshibaSemiconductor.pdf
Description: Silicon N Channel Dual Gate MOS Type FET

Applications

* Unit: mm
* Superior cross modulation performance.
* Low reverse transfer capacitance: Crss = 0.015 pF (typ. )
* Low noise figure: NF = 1.9dB (typ. ) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power di

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3SK256 Silicon Channel Dual Gate MOS Type FET Toshiba Semiconductor

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