3SK253 Datasheet - NEC

3SK253, RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK253 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATUR.

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Datasheet Details

Part number:

3SK253

Manufacturer:

NEC

File Size:

52.57 KB

Description:

RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

Features

* Low VDD Use
* Driving Battery : (VDS = 3.5 V) NF = 1.8 dB TYP. (f = 900 MHz) GPS = 18.0 dB TYP. (f = 900 MHz) Embossed Type Taping 2.9±0.2 (1.8) PACKAGE DIMENSIONS (Unit: mm) 2.8 +0.2
* 0.3 1.5 +0.2
* 0.1 2 3 0.4 +0.1
* 0.05 4 0.4 +0.1
* 0.05 0.95

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

3SK253 Distributors

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3SK253 AMPLIFIER FOR UHF TUNER N-CHANNEL DUAL GATE MOS FIELD-EFFECT TRANSISTOR PINS MINI MOLD NEC

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