Datasheet Details
- Part number
- 3SK253
- Manufacturer
- NEC
- File Size
- 52.57 KB
- Datasheet
- 3SK253_NEC.pdf
- Description
- RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
3SK253 Description
DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK253 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATUR.
3SK253 Features
* Low VDD Use
* Driving Battery : (VDS = 3.5 V) NF = 1.8 dB TYP. (f = 900 MHz) GPS = 18.0 dB TYP. (f = 900 MHz) Embossed Type Taping
2.9±0.2 (1.8)
PACKAGE DIMENSIONS
(Unit: mm)
2.8 +0.2
* 0.3 1.5 +0.2
* 0.1
2 3 0.4 +0.1
* 0.05 4 0.4 +0.1
* 0.05 0.95
3SK253 Applications
* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic
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