* Low VDD Use
* Driving Battery : (VDS = 3.5 V) NF = 1.8 dB TYP. (f = 900 MHz) GPS = 18.0 dB TYP. (f = 900 MHz) Embossed Type Taping 2.9±0.2 (1.8) PACKAGE DIMENSIONS (Unit: mm) 2.8 +0.2
* 0.3 1.5 +0.2
* 0.1 2 3 0.4 +0.1
* 0.05 4 0.4 +0.1
* 0.05 0.95
3SK253
NEC
52.57 KB
Rf amplifier for uhf tuner n-channel si dual gate mos field-effect transistor 4 pins mini mold.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK253
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
FEATUR.
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