* 0.65±0.15 2.9±0.2 1.9±0.2 1.5
* 0.3 0.65±0.15 1.1
* 0.1 +0.2 Parameter Symbol Ratings 15 Unit V V V Drain to Source voltage VDS Gate 2 to Source voltage Drain current VG2S ID PD ±8 ±30 200 150 mA Allowable power dissipation Channel temperature Storage temperature mW °C
3SK227
Panasonic
186.32 KB
Silicon n-channel 4-pin mosfet.
High Frequency FETs
3SK227
Silicon N-Channel 4-pin MOS FET
For VHF amplification
unit: mm
2.8
*0.3
+0.2 +0.2
M Di ain sc te on na tin nc ue .
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