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3SK227 - Silicon N-Channel 4-pin MOSFET

Datasheet Summary

Features

  • 0.65±0.15 2.9±0.2 1.9±0.2 1.5.
  • 0.3 0.65±0.15 1.1.
  • 0.1 +0.2 Parameter Symbol Ratings 15 Unit V V V Drain to Source voltage VDS Gate 2 to Source voltage Drain current VG2S ID PD ±8 ±30 200 150 mA Allowable power dissipation Channel temperature Storage temperature mW °C °C 1: Source 2: Drain 3: Gate2 4: Gate1 Mini Type Package (4-pin) Tch Tstg.
  • 55 to +150 Marking Symbol: CX s Electrical Characteristics (Ta = 25°C) Parameter Symbol Drain current IDS Co.

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Datasheet Details

Part number 3SK227
Manufacturer Panasonic
File Size 186.32 KB
Description Silicon N-Channel 4-pin MOSFET
Datasheet download datasheet 3SK227 Datasheet
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Full PDF Text Transcription

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High Frequency FETs 3SK227 Silicon N-Channel 4-pin MOS FET For VHF amplification unit: mm 2.8 –0.3 +0.2 +0.2 M Di ain sc te on na tin nc ue e/ d s Features 0.65±0.15 2.9±0.2 1.9±0.2 1.5 –0.3 0.65±0.15 1.1 –0.1 +0.2 Parameter Symbol Ratings 15 Unit V V V Drain to Source voltage VDS Gate 2 to Source voltage Drain current VG2S ID PD ±8 ±30 200 150 mA Allowable power dissipation Channel temperature Storage temperature mW °C °C 1: Source 2: Drain 3: Gate2 4: Gate1 Mini Type Package (4-pin) Tch Tstg −55 to +150 Marking Symbol: CX s Electrical Characteristics (Ta = 25°C) Parameter Symbol Drain current IDS Conditions min 6 typ 0 to 0.1 Gate 1 to Source voltage VG1S ±8 0.4±0.2 0.
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