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High Frequency FETs
3SK285
3SK302(Tentative), 3SK306(Tentative)
Silicon N-Channel MOS
For UHF amplification
s Features
q Though low voltage operation, performance is equivalent to the conventional product.
q Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magazine packing are available.
3SK302
0.65±0.15
+0.2
2.8 –0.3
+0.2
1.5 –0.3
Unit : mm
0.65±0.15
0.5R 41
2.9±0.2 1.9±0.2 0.95 0.95
32
+0.1
0.4 –0.05
0 to 0.1
+0.1
0.16 –0.06
+0.2
1.1 –0.1 0.
3SK306 Datasheet
