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3SK319 - UHF RF Amplifier

3SK319 Description

3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602(Z) 1st.Edition February 1998 .

3SK319 Features

* Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz)
* Excellent cross modulation characteristics
* Capable low voltage operation; +B= 5V Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is “YB
* ”. 3SK319 Absolute Maximum Ratings (

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Datasheet Details

Part number
3SK319
Manufacturer
Hitachi Semiconductor
File Size
49.88 KB
Datasheet
3SK319_HitachiSemiconductor.pdf
Description
UHF RF Amplifier

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UHF Amplifier Hitachi Semiconductor
Hitachi Semiconductor 3SK319-like datasheet