3SK321 Silicon N-Channel Dual Gate MOS FET

Hitachi Semiconductor

Description

3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711A (Z) 2nd.Edition Dec.1998 Application UHF RF amplifier .

📥 Download Datasheet

3SK321 Datasheet Preview — Preview of 3SK321 PDF

Datasheet Specifications

Part number: 3SK321
Manufacturer: Hitachi Semiconductor
File Size: 59.20 KB
Datasheet: 3SK321_HitachiSemiconductor.pdf
Description: Silicon N-Channel Dual Gate MOS FET

Features

* Low noise figure. NF = 2.0 dB typ. at f = 900 MHz
* Capable of low voltage operation
* Provide mini mold packages; MPAK-4R(SOT-143 var. ) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 3SK321 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage

3SK321 Distributors

📁 Related Datasheet

3SK320 3SK302 3SK306 3SK38A 3SK101 3SK102

📌 All Tags

3SK321 Silicon N-Channel Dual Gate MOS FET Hitachi Semiconductor

Hitachi Semiconductor 3SK321-like datasheet