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3SK321

Silicon N-Channel Dual Gate MOS FET

3SK321 Features

* Low noise figure. NF = 2.0 dB typ. at f = 900 MHz

* Capable of low voltage operation

* Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 3SK321 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage

3SK321 Datasheet (59.20 KB)

Preview of 3SK321 PDF

Datasheet Details

Part number:

3SK321

Manufacturer:

Hitachi Semiconductor

File Size:

59.20 KB

Description:

Silicon n-channel dual gate mos fet.

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3SK321 Silicon N-Channel Dual Gate MOS FET Hitachi Semiconductor

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