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3SK321 - Silicon N-Channel Dual Gate MOS FET

3SK321 Description

3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711A (Z) 2nd.Edition Dec.1998 Application UHF RF amplifier .

3SK321 Features

* Low noise figure. NF = 2.0 dB typ. at f = 900 MHz
* Capable of low voltage operation
* Provide mini mold packages; MPAK-4R(SOT-143 var. ) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 3SK321 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage

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Datasheet Details

Part number
3SK321
Manufacturer
Hitachi Semiconductor
File Size
59.20 KB
Datasheet
3SK321_HitachiSemiconductor.pdf
Description
Silicon N-Channel Dual Gate MOS FET

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📌 All Tags

Silicon N-Channel Dual Gate MOS FET Hitachi Semiconductor
Hitachi Semiconductor 3SK321-like datasheet