3SK300, Hitachi Semiconductor
3SK300
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
ADE-208-449 1st. Edition Features
• Low noise figure NF = 1.0 dB typ. at f = 200 MH.
3SK302, Panasonic
High Frequency FETs
3SK285
3SK302(Tentative), 3SK306(Tentative)
Silicon N-Channel MOS
For UHF amplification
s Features
q Though low voltage operati.
3SK306, Panasonic
High Frequency FETs
3SK285
3SK302(Tentative), 3SK306(Tentative)
Silicon N-Channel MOS
For UHF amplification
s Features
q Though low voltage operati.
