3SK309 - UHF RF Amplifier

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Hitachi Semiconductor

Part number	3SK309
Manufacturer	Hitachi Semiconductor
File Size	59.99 KB
Description	UHF RF Amplifier
Datasheet	3SK309 Datasheet
Additional preview pages of the 3SK309 datasheet.

Capable of low voltage operation (VDS = 1.5 to 3 V).
Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz).
High power gain (PG = 21.0 dB typ. at f = 900 MHz) Outline CMPAK.
4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK309 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S.

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Published: Mar 30, 2005 |