Part number:
3SK318
Manufacturer:
Hitachi Semiconductor
File Size:
54.48 KB
Description:
Uhf rf amplifier.
* Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz)
* Excellent cross modulation characteristics
* Capable low voltage operation; +B= 5V Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is “YB
* ”. 3SK318 Absolute Maximum Ratings
3SK318
Hitachi Semiconductor
54.48 KB
Uhf rf amplifier.
📁 Related Datasheet
3SK317 - UHF / VHF RF Amplifier
(Hitachi Semiconductor)
3SK317
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
ADE-208-778 (Z) 1st. Edition Mar. 1999 Features
• Low noise characteristics; (NF = .
3SK319 - UHF RF Amplifier
(Hitachi Semiconductor)
3SK319
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
ADE-208-602(Z) 1st. Edition February 1998 Features
• Low noise characteristics; (NF= 1.4 .
3SK300 - Silicon N-Channel Transistor
(Hitachi Semiconductor)
3SK300
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
ADE-208-449 1st. Edition Features
• Low noise figure NF = 1.0 dB typ. at f = 200 MH.
3SK302 - Silicon N-Channel MOS
(Panasonic)
High Frequency FETs
3SK285
3SK302(Tentative), 3SK306(Tentative)
Silicon N-Channel MOS
For UHF amplification
s Features
q Though low voltage operati.
3SK306 - Silicon N-Channel MOS
(Panasonic)
High Frequency FETs
3SK285
3SK302(Tentative), 3SK306(Tentative)
Silicon N-Channel MOS
For UHF amplification
s Features
q Though low voltage operati.
3SK309 - UHF RF Amplifier
(Hitachi Semiconductor)
3SK309
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
ADE-208-472 A 2nd. Edition Features
• Capable of low voltage operation (VDS = 1.5 to 3 V) • .
3SK320 - N-Channel Transistor
(Toshiba Semiconductor)
.
3SK321 - Silicon N-Channel Dual Gate MOS FET
(Hitachi Semiconductor)
3SK321
Silicon N-Channel Dual Gate MOS FET
ADE-208-711A (Z) 2nd. Edition Dec. 1998 Application
UHF RF amplifier
Features
• Low noise figure. NF = 2..
