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3SK322

Silicon N-Channel Dual Gate MOS FET

3SK322 Features

* Low noise figure. NF = 1.0 dB typ. at f = 200 MHz

* Capable of low voltage operation

* Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline 3SK322 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drai

3SK322 Datasheet (90.15 KB)

Preview of 3SK322 PDF

Datasheet Details

Part number:

3SK322

Manufacturer:

Hitachi Semiconductor

File Size:

90.15 KB

Description:

Silicon n-channel dual gate mos fet.

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3SK322 Silicon N-Channel Dual Gate MOS FET Hitachi Semiconductor

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