* : Ultra Small Drain-Source Thermoelectromotive Force : Vemf = 1.3 uV/°C (Typ . High Resistance Ratio : r DS (ON) = 50ffi(Max.) at. Vg1S=3V : r DS (OFF)= 100WQ(Min.) at. Vc i S =OV Low Gate Capacitance and Offset : CD = 2.5pF(Max.), J G =0. 3pF(Max. Contains Gates Protection Diode. 0S .39! 1AX ^Zfe.
3SK38A
125.95 KB
Silicon n-channel transistor.
3SK38A
C)
)
4
SILICON N CHANNEL MOS TYPE
(INDUSTRIAL APPLICATIONS)
CHOPPER CIRCUIT APPLICATIONS. SWITCHING CIRCUIT APPLICATIONS. IMPEDANCE CONVER.
📁 Related Datasheet
3SK300 - Silicon N-Channel Transistor
(Hitachi Semiconductor)
3SK300
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
ADE-208-449 1st. Edition Features
• Low noise figure NF = 1.0 dB typ. at f = 200 MH.
3SK302 - Silicon N-Channel MOS
(Panasonic)
High Frequency FETs
3SK285
3SK302(Tentative), 3SK306(Tentative)
Silicon N-Channel MOS
For UHF amplification
s Features
q Though low voltage operati.
3SK306 - Silicon N-Channel MOS
(Panasonic)
High Frequency FETs
3SK285
3SK302(Tentative), 3SK306(Tentative)
Silicon N-Channel MOS
For UHF amplification
s Features
q Though low voltage operati.
3SK309 - UHF RF Amplifier
(Hitachi Semiconductor)
3SK309
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
ADE-208-472 A 2nd. Edition Features
• Capable of low voltage operation (VDS = 1.5 to 3 V) • .
3SK317 - UHF / VHF RF Amplifier
(Hitachi Semiconductor)
3SK317
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
ADE-208-778 (Z) 1st. Edition Mar. 1999 Features
• Low noise characteristics; (NF = .
3SK318 - UHF RF Amplifier
(Hitachi Semiconductor)
3SK318
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
ADE-208-600(Z) 1st. Edition February 1998 Features
• Low noise characteristics; (NF= 1.4 .
3SK319 - UHF RF Amplifier
(Hitachi Semiconductor)
3SK319
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
ADE-208-602(Z) 1st. Edition February 1998 Features
• Low noise characteristics; (NF= 1.4 .
3SK320 - N-Channel Transistor
(Toshiba Semiconductor)
.
