Datasheet4U Logo Datasheet4U.com

3SK228 - Silicon NPN Triple Diffused

📥 Download Datasheet

Datasheet preview – 3SK228

Datasheet Details

Part number 3SK228
Manufacturer Hitachi Semiconductor
File Size 68.17 KB
Description Silicon NPN Triple Diffused
Datasheet download datasheet 3SK228 Datasheet
Additional preview pages of the 3SK228 datasheet.

📁 Similar Datasheet

  • 3SK22 - Silicon N-Channel Transistor (Toshiba)
  • 3SK222 - N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR (NEC)
  • 3SK223 - N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR (NEC)
  • 3SK224 - N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR (NEC)
  • 3SK225 - Silicon N Channel Dual Gate MOS Type FET (Toshiba Semiconductor)
  • 3SK226 - Silicon N Channel Dual Gate MOS Type FET (Toshiba Semiconductor)
  • 3SK227 - Silicon N-Channel 4-pin MOSFET (Panasonic)
  • 3SK206 - RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD (NEC)
  • 3SK207 - Silicon N Channel Dual Gate MOS Type FET (Toshiba Semiconductor)
  • 3SK231 - MOSFET (NEC)
Other Datasheets by Hitachi Semiconductor
  • 3SK233 - Silicon N-Channel Dual Gate MOS FET
  • 3SK239A - GaAs Dual Gate MES FET
  • 3SK290 - Silicon N-Channel Dual Gate MOS FET
  • 3SK295 - Silicon N-Channel Dual Gate MOS FET
  • 3SK296 - Silicon N-Channel Dual-Gate MOSFET
  • 3SK297 - Silicon N-Channel Dual Gate MOS FET
  • 3SK298 - Silicon N-Channel Dual Gate MOS FET
  • 3SK186 - Silicon N-Channel Dual Gate MOS FET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com 3SK228 GaAs Dual Gate MES FET ADE-208-280 1st. Edition Application UHF TV tuner RF Amplifier Outline www.DataSheet4U.com 3SK228 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 –6 –6 50 150 125 –55 to +125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source cutoff current Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Drain current Symbol I DSX V(BR)G1SS V(BR)G2SS I G1SS I G2SS I DSS Min — –6 –6 — — 10 — — 20 — — — 17 — Typ — — — — — 17 –1.1 –1.1 34 0.58 0.36 0.028 19.6 1.
Published: |