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3SK297

Silicon N-Channel Dual Gate MOS FET

3SK297 Features

* Low noise figure. NF = 1.0 dB typ. at f = 200 MHz

* Capable of low voltage operation Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK297 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain cur

3SK297 Datasheet (54.84 KB)

Preview of 3SK297 PDF

Datasheet Details

Part number:

3SK297

Manufacturer:

Hitachi Semiconductor

File Size:

54.84 KB

Description:

Silicon n-channel dual gate mos fet.

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3SK297 Silicon N-Channel Dual Gate MOS FET Hitachi Semiconductor

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