3SK297 Silicon N-Channel Dual Gate MOS FET

Hitachi Semiconductor

Description

3SK297 Silicon N-Channel Dual Gate MOS FET ADE-208-389 1st.Edition Application UHF / VHF RF amplifier .

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Datasheet Specifications

Part number: 3SK297
Manufacturer: Hitachi Semiconductor
File Size: 54.84 KB
Datasheet: 3SK297_HitachiSemiconductor.pdf
Description: Silicon N-Channel Dual Gate MOS FET

Features

* Low noise figure. NF = 1.0 dB typ. at f = 200 MHz
* Capable of low voltage operation Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK297 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain cur

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3SK297 Silicon N-Channel Dual Gate MOS FET Hitachi Semiconductor

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