Datasheet4U Logo Datasheet4U.com

3SK299

RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD

3SK299 Features

* Suitable for use as RF amplifier in UHF TV tuner.

* Low Crss : 0.02 pF TYP.

* High GPS : 20 dB TYP.

* Low NF : 1.1 dB TYP.

* 4 PIN SMALL MINI MOLD PACKAGE PACKAGE DIMENSIONS in millimeters 0.3 +0.1

* 0.05 0.3 +0.1

* 0.05 3 4 0.3 +0.1

3SK299 Datasheet (53.88 KB)

Preview of 3SK299 PDF

Datasheet Details

Part number:

3SK299

Manufacturer:

NEC

File Size:

53.88 KB

Description:

Rf amp. for uhf tv tuner n-channel gaas dual-gate mes fifld-effect transistor 4 pin small mini mold.
DATA SHEET MES FIELD EFFECT TRANSISTOR 3SK299 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD F.

📁 Related Datasheet

3SK290 - Silicon N-Channel Dual Gate MOS FET (Hitachi Semiconductor)
3SK290 Silicon N-Channel Dual Gate MOS FET ADE-208-271 1st. Edition Application UHF RF amplifier Features · Low noise figure. NF = 2.3 dB Typ. at f.

3SK291 - Silicon N-Channel Dual Gate MOS Type FET (Toshiba Semiconductor)
3SK291 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK291 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cros.

3SK292 - Silicon N-Channel Dual Gate MOS Type FET (Toshiba Semiconductor)
3SK292 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK292 TV Tuner, VHF RF Amplifier Application Unit: mm • Superior cross.

3SK293 - Silicon N-Channel Dual Gate MOS Type FET (Toshiba Semiconductor)
3SK293 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK293 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cros.

3SK294 - Silicon N-Channel Dual Gate MOS Type FET (Toshiba Semiconductor)
3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TV Tuner, VHF RF Amplifier Application Unit: mm • Superior cross.

3SK295 - Silicon N-Channel Dual Gate MOS FET (Hitachi Semiconductor)
3SK295 Silicon N-Channel Dual Gate MOS FET ADE-208-387 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f.

3SK296 - Silicon N-Channel Dual-Gate MOSFET (Hitachi Semiconductor)
3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f.

3SK296 - N-Channel Dual-Gate MOSFET (Renesas)
.

TAGS

3SK299 AMP. FOR UHF TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR PIN SMALL MINI MOLD NEC

Image Gallery

3SK299 Datasheet Preview Page 2 3SK299 Datasheet Preview Page 3

3SK299 Distributor