3SK295 - Silicon N-Channel Dual Gate MOS FET

Hitachi Semiconductor

Datasheet Details

Low noise figure. NF = 2.0 dB typ. at f = 900 MHz.
Capable of low voltage operation Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK295 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 150 150.
55 to +150 Unit V V V mA mW °C °C Attention: This devi.

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Published: Mar 30, 2005 |