3SK290 Silicon N-Channel Dual Gate MOS FET

Hitachi Semiconductor

Description

3SK290 Silicon N-Channel Dual Gate MOS FET ADE-208-271 1st.Edition Application UHF RF amplifier .

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Datasheet Specifications

Part number: 3SK290
Manufacturer: Hitachi Semiconductor
File Size: 90.76 KB
Datasheet: 3SK290_HitachiSemiconductor.pdf
Description: Silicon N-Channel Dual Gate MOS FET

Features

* Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz
* High gain. PG = 19.3 dB Typ. at f = 900 MHz Outline CMPAK
* 4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK290 Absolute Maximum Ratings (Ta = 25¡C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage

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3SK290 Silicon N-Channel Dual Gate MOS FET Hitachi Semiconductor

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