Datasheet4U Logo Datasheet4U.com

3SK290 - Silicon N-Channel Dual Gate MOS FET

Datasheet Summary

Features

  • Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz.
  • High gain. PG = 19.3 dB Typ. at f = 900 MHz Outline CMPAK.
  • 4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK290 Absolute Maximum Ratings (Ta = 25¡C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 100 125.
  • 55 to +125 Unit V V V mA mW °C °C Attention:.

📥 Download Datasheet

Datasheet preview – 3SK290

Datasheet Details

Part number 3SK290
Manufacturer Hitachi Semiconductor
File Size 90.76 KB
Description Silicon N-Channel Dual Gate MOS FET
Datasheet download datasheet 3SK290 Datasheet
Additional preview pages of the 3SK290 datasheet.

📁 Similar Datasheet

  • 3SK291 - Silicon N-Channel Dual Gate MOS Type FET (Toshiba Semiconductor)
  • 3SK292 - Silicon N-Channel Dual Gate MOS Type FET (Toshiba Semiconductor)
  • 3SK293 - Silicon N-Channel Dual Gate MOS Type FET (Toshiba Semiconductor)
  • 3SK294 - Silicon N-Channel Dual Gate MOS Type FET (Toshiba Semiconductor)
  • 3SK296 - N-Channel Dual-Gate MOSFET (Renesas)
  • 3SK299 - RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD (NEC)
  • 3SK206 - RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD (NEC)
  • 3SK207 - Silicon N Channel Dual Gate MOS Type FET (Toshiba Semiconductor)
  • 3SK22 - Silicon N-Channel Transistor (Toshiba)
  • 3SK222 - N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR (NEC)
Other Datasheets by Hitachi Semiconductor
  • 3SK295 - Silicon N-Channel Dual Gate MOS FET
  • 3SK296 - Silicon N-Channel Dual-Gate MOSFET
  • 3SK297 - Silicon N-Channel Dual Gate MOS FET
  • 3SK298 - Silicon N-Channel Dual Gate MOS FET
  • 3SK228 - Silicon NPN Triple Diffused
  • 3SK233 - Silicon N-Channel Dual Gate MOS FET
  • 3SK239A - GaAs Dual Gate MES FET
  • 3SK186 - Silicon N-Channel Dual Gate MOS FET

Full PDF Text Transcription

Click to expand full text
3SK290 Silicon N-Channel Dual Gate MOS FET ADE-208-271 1st. Edition Application UHF RF amplifier Features · Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz · High gain. PG = 19.3 dB Typ. at f = 900 MHz Outline CMPAK–4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK290 Absolute Maximum Ratings (Ta = 25¡C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 100 125 –55 to +125 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor.
Published: |