• Part: 3SK292
  • Description: Silicon N-Channel Dual Gate MOS Type FET
  • Manufacturer: Toshiba
  • Size: 288.98 KB
Download 3SK292 Datasheet PDF
Toshiba
3SK292
TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Application Unit: mm - Superior cross modulation performance. - Low reverse transfer capacitance: Crss = 20 f F (typ.) - Low noise figure: NF = 1.4d B (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range VDS VG1S VG2S ID PD Tch Tstg 12.5 ±8 ±8 30 150 125 - 55 to 125 V V V m A m W °C °C Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA ― reliability significantly even if the operating conditions (i.e. TOSHIBA 2-3J1A operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 13...