3SK292 - Silicon N-Channel Dual Gate MOS Type FET

Toshiba

Datasheet Details

Part number	3SK292
Manufacturer	Toshiba
File Size	288.98 KB
Description	Silicon N-Channel Dual Gate MOS Type FET
Datasheet	3SK292 Datasheet

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3SK292 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK292 TV Tuner, VHF RF Amplifier Application Unit: mm • Superior cross modulation performance. • Low reverse transfer capacitance: Crss = 20 fF (typ.) • Low noise figure: NF = 1.4dB (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range VDS VG1S VG2S ID PD Tch Tstg 12.5 ±8 ±8 30 150 125 −55 to 125 V V V mA mW °C °C SMQ Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in temperature, etc.