Click to expand full text
3SK293
TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type
3SK293
TV Tuner, UHF RF Amplifier Applications
Unit: mm
• Superior cross modulation performance • Low reverse transfer capacitance: Crss = 16 fF (typ.) • Low noise figure: NF = 1.5dB (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS 12.5 V
Gate 1-source voltage
VG1S ±8 V
Gate 2-source voltage
VG2S ±8 V
Drain current Drain power dissipation
ID 30 mA PD 100 mW
1.Drain 2.Source 3.Gate1
Channel temperature Storage temperature range
Tch 125 °C
Tstg
−55 to 125
°C
USQ
4.Gate2
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
JEDEC JEITA
― ―
temperature, etc.
3SK293 Datasheet
