3SK291
TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type
TV Tuner, UHF RF Amplifier Applications
Unit: mm
- Superior cross modulation performance
- Low reverse transfer capacitance: Crss = 0.016 p F (typ.)
- Low noise figure: NF = 1.5d B (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS 12.5 V
Gate 1-source voltage
VG1S ±8 V
Gate 2-source voltage
VG2S ±8 V
Drain current
ID 30 m A
Drain power dissipation
PD 150 m W
Channel temperature
Tch 125 °C
Storage temperature range
Tstg
- 55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
― temperature/current/voltage and the significant change in
JEITA
― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3J1A operating temperature/current/voltage, etc.) are within the
Weight: 0.013 g (typ.)...
