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3SK291 - Silicon N-Channel Dual Gate MOS Type FET

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Part number 3SK291
Manufacturer Toshiba Semiconductor
File Size 349.49 KB
Description Silicon N-Channel Dual Gate MOS Type FET
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3SK291 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK291 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 0.016 pF (typ.) • Low noise figure: NF = 1.5dB (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 12.5 V Gate 1-source voltage VG1S ±8 V Gate 2-source voltage VG2S ±8 V Drain current ID 30 mA Drain power dissipation PD 150 mW Channel temperature Tch 125 °C Storage temperature range Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in JEITA ― temperature, etc.
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