The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
3SK291
TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type
3SK291
TV Tuner, UHF RF Amplifier Applications
Unit: mm
• Superior cross modulation performance • Low reverse transfer capacitance: Crss = 0.016 pF (typ.) • Low noise figure: NF = 1.5dB (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS 12.5 V
Gate 1-source voltage
VG1S ±8 V
Gate 2-source voltage
VG2S ±8 V
Drain current
ID 30 mA
Drain power dissipation
PD 150 mW
Channel temperature
Tch 125 °C
Storage temperature range
Tstg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.
3SK291 Datasheet
