3SK294
TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type
TV Tuner, VHF RF Amplifier Application
Unit: mm
- Superior cross modulation performance
- Low reverse transfer capacitance: Crss = 20 f F (typ.)
- Low noise figure: NF = 1.4d B (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS 12.5 V
Gate 1-source voltage
VG1S ±8 V
Gate 2-source voltage
VG2S ±8 V
Drain current Drain power dissipation
ID 30 m A PD 100 m W
1.Drain 2.Source 3.Gate1
Channel temperature Storage temperature range
Tch 125 °C
Tstg
- 55 to 125
°C
4.Gate2
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
JEDEC JEITA
― ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2K1B...
