The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
3SK294
TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type
3SK294
TV Tuner, VHF RF Amplifier Application
Unit: mm
• Superior cross modulation performance • Low reverse transfer capacitance: Crss = 20 fF (typ.) • Low noise figure: NF = 1.4dB (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS 12.5 V
Gate 1-source voltage
VG1S ±8 V
Gate 2-source voltage
VG2S ±8 V
Drain current Drain power dissipation
ID 30 mA PD 100 mW
1.Drain 2.Source 3.Gate1
Channel temperature Storage temperature range
Tch 125 °C
Tstg
−55 to 125
°C
USQ
4.Gate2
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
JEDEC JEITA
― ―
temperature, etc.
3SK294 Datasheet
