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3SK233 - Silicon N-Channel Dual Gate MOS FET

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Part number 3SK233
Manufacturer Hitachi Semiconductor
File Size 350.38 KB
Description Silicon N-Channel Dual Gate MOS FET
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3SK233 Silicon N Channel Dual Gate MOS FET UHF TV Tuner RF Amplifier Feature • Low voltage operation. • Superior cross modulation characteristics. Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————– Drain to source voltage VDS 12 V ——————————————————————– Gate 1 to source voltage VG1S ±10 V ——————————————————————– Gate 2 to source voltage VG2S ±10 V ——————————————————————– Drain current ID 35 mA ——————————————————————– Channel power dissipation Pch 150 mW ——————————————————————– Channel temperature Tch 125 °C ——————————————————————– Storage temperature Tstg –55 to +125 °C ——————————————————————– MPAK-4 2 3 1 4 1. Source 2. Gate 1 3. Gate 2 4.
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