3SK239A GaAs Dual Gate MES FET

Hitachi Semiconductor

Description

3SK239A GaAs Dual Gate MES FET Application UHF RF amplifier .

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Datasheet Specifications

Part number: 3SK239A
Manufacturer: Hitachi Semiconductor
File Size: 41.66 KB
Datasheet: 3SK239A_HitachiSemiconductor.pdf
Description: GaAs Dual Gate MES FET

Features

* Excellent low noise characteristics (NF = 1.3 dB Typ at f = 900 MHz)
* Capable of low voltage operation Outline 3SK239A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Chan

Applications

* based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropr

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3SK239A GaAs Dual Gate MES FET Hitachi Semiconductor

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