3SK296 Silicon N-Channel Dual-Gate MOSFET

Hitachi Semiconductor

Description

3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st.Edition Application UHF RF amplifier .

📥 Download Datasheet

3SK296 Datasheet Preview — Preview of 3SK296 PDF

Datasheet Specifications

Part number: 3SK296
Manufacturer: Hitachi Semiconductor
File Size: 50.65 KB
Datasheet: 3SK296_HitachiSemiconductor.pdf
Description: Silicon N-Channel Dual-Gate MOSFET

Features

* Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz
* Capable of low voltage operation Outline CMPAK
* 4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK296 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Dr

3SK296 Distributors

📁 Related Datasheet

3SK291 3SK292 3SK293 3SK294 3SK299 3SK206

📌 All Tags

3SK296 Silicon N-Channel Dual-Gate MOSFET Hitachi Semiconductor

Hitachi Semiconductor 3SK296-like datasheet