3SK291
Toshiba ↗ Semiconductor
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Silicon n-channel dual gate mos type fet.
3SK291
TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type
3SK291
TV Tuner, UHF RF Amplifier Applications
Unit: mm
* Super.
📁 Related Datasheet
3SK290 - Silicon N-Channel Dual Gate MOS FET
(Hitachi Semiconductor)
3SK290
Silicon N-Channel Dual Gate MOS FET
ADE-208-271 1st. Edition
Application
UHF RF amplifier
Features
· Low noise figure. NF = 2.3 dB Typ. at f.
3SK292 - Silicon N-Channel Dual Gate MOS Type FET
(Toshiba Semiconductor)
3SK292
TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type
3SK292
TV Tuner, VHF RF Amplifier Application
Unit: mm
• Superior cross.
3SK293 - Silicon N-Channel Dual Gate MOS Type FET
(Toshiba Semiconductor)
3SK293
TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type
3SK293
TV Tuner, UHF RF Amplifier Applications
Unit: mm
• Superior cros.
3SK294 - Silicon N-Channel Dual Gate MOS Type FET
(Toshiba Semiconductor)
3SK294
TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type
3SK294
TV Tuner, VHF RF Amplifier Application
Unit: mm
• Superior cross.
3SK295 - Silicon N-Channel Dual Gate MOS FET
(Hitachi Semiconductor)
3SK295
Silicon N-Channel Dual Gate MOS FET
ADE-208-387 1st. Edition
Application
UHF RF amplifier
Features
• Low noise figure. NF = 2.0 dB typ. at f.
3SK296 - Silicon N-Channel Dual-Gate MOSFET
(Hitachi Semiconductor)
3SK296
Silicon N-Channel Dual Gate MOS FET
ADE-208-388 1st. Edition
Application
UHF RF amplifier
Features
• Low noise figure. NF = 2.0 dB Typ. at f.
3SK296 - N-Channel Dual-Gate MOSFET
(Renesas)
.
3SK297 - Silicon N-Channel Dual Gate MOS FET
(Hitachi Semiconductor)
3SK297
Silicon N-Channel Dual Gate MOS FET
ADE-208-389 1st. Edition
Application
UHF / VHF RF amplifier
Features
• Low noise figure. NF = 1.0 dB typ.
