3SK291 Silicon N-Channel Dual Gate MOS Type FET

Toshiba Semiconductor

Description

3SK291 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK291 TV Tuner, UHF RF Amplifier Applications Unit: mm * Super.

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Datasheet Specifications

Part number: 3SK291
Manufacturer: Toshiba ↗ Semiconductor
File Size: 349.49 KB
Datasheet: 3SK291_ToshibaSemiconductor.pdf
Description: Silicon N-Channel Dual Gate MOS Type FET

Applications

* Unit: mm
* Superior cross modulation performance
* Low reverse transfer capacitance: Crss = 0.016 pF (typ. )
* Low noise figure: NF = 1.5dB (typ. ) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 12.5 V Gate 1-source vo

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3SK291 Silicon N-Channel Dual Gate MOS Type FET Toshiba Semiconductor

Toshiba Semiconductor 3SK291-like datasheet