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Public IGI65D1414A3MS Final datasheet CoolGaNTM Transistor Dual 650V G5 140 m / 650 V GaN half-bridge Features • Two 140 m GaN switches in half-bri

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Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating;

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CYNTEC CO., LTD. Power Choke Coil VCHA042A MS6 type  Features High performance (Isat) realized by metal dust core. Low profile：Thickness max. 2.1mm

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Features  P-Channel，-5V Logic Level Control  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  100% Avalanche Tested

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X Type Across-The-Line Filter Disc Ceramic Capacitors { UL Recognized UL 1414, File E38785 { CSA Certified CSA 22.2#1, File LR33468 { VDE Recognized

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Features  N-Channel  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-f

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VST008N03MS 30V/90A N-Channel Advanced Power MOSFET Features Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed

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Features  P-Channel，-5V Logic Level Control  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  100% Avalanche Tested

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Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating;

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche test  Pb-free lead plati

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ACTS373MS April 1995 Radiation Hardened Octal Transparent Latch, Three-State Pinouts 20 LEAD CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR, CDIP2-T20,

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45 Features • • • • • • • • EMI filtering-MIL-STD-461E Transient protection-MIL-STD-704E Environments-MIL-STD-810, MIL-STD-202 Environmental stress sc

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Features  P-Channel  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  Repetitive Avalanche Allowed up to Tjmax  Pb

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Features  P-Channel，-5V Logic Level Control  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  100% Avalanche Tested

(3 views)

Features  P-Channel，-5V Logic Level Control  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  Pb-free lead plating;

(3 views)

Features  P-Channel  Very low on-resistance RDS(on) @ VGS=-4.5 V  100 Avalanche Tested  Fast Switching  Repetitive Avalanche Allowed up to Tjmax

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BSC025N03MS G MOSFET OptiMOSª3 M-Series Power-MOSFET, 30 V Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High F

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HCTS153MS September 1995 Radiation Hardened Dual 4-Input Multiplexer Pinouts 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDI

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HCTS163MS September 1995 Radiation Hardened Synchronous Counter Pinouts 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T1

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