4-BANKS Datasheet | Specifications & PDF Download

www.DataSheet.co.kr W9751G6JB 8M  4 BANKS  16 BIT DDR2 SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. 7.1 7.2 GENERAL DESCRIPTION

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K4S283233F - F(H)E/N/G/C/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed add

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K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS compatible with multiplexed address.

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www.DataSheet.co.kr W9725G8JB 8M  4 BANKS  8 BIT DDR2 SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. 7.1 7.2 GENERAL DESCRIPTION

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ESMT SDRAM FEATURES y JEDEC standard 3.3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key

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K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to c

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K4S641633H - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed add

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W9864G6DB Table of Contents- 1M × 4 BANKS × 16 BITS SDRAM 1. GENERAL DESCRIPTION

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K4M28163PF - R(B)G/F 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba

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www.DataSheet4U.com K4M28323PH - F(H)E/G/C/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multi

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www.DataSheet4U.com HY57V56820C(L)T 4 Banks x 8M x 8Bit Synchronous DRAM DESCRIPTION The HY57V56820C is a 268,435,456bit CMOS Synchronous DRAM, ideal

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K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. •

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K4S51323LF - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMOS compatible with multiplexed

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www.DataSheet.co.kr W9464G6IH 1M × 4 BANKS × 16 BITS DDR SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION

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www.DataSheet.co.kr W9464G6JH 1M  4 BANKS  16 BITS DDR SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION

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www.DataSheet.co.kr W971GG6JB 8M  8 BANKS  16 BIT DDR2 SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. 7.1 7.2 GENERAL DESCRIPTION

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www.DataSheet.co.kr W972GG6JB 16M  8 BANKS  16 BIT DDR2 SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. 7.1 7.2 GENERAL DESCRIPTION

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W971GG8KB 16M  8 BANKS  8 BIT DDR2 SDRAM Table of Contents- 1. GENERAL DESCRIPTION

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ESMT SDRAM FEATURES y JEDEC standard 3.3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key

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ESMT SDRAM FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key program

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