K4S641633H-L Datasheet, 54fbga, Samsung semiconductor

✔ K4S641633H-L Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Bur

✔ K4S641633H-L Application

ORDERING INFORMATION Part No. K4S641633H-R(B)E/N/G/C/L/F75 K4S641633H-R(B)E/N/G/C/L/F1H K4S641633H-R(B)E/N

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Part number:

K4S641633H-L

Manufacturer:

Samsung semiconductor

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112.38 KB

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📄 Datasheet

Description:

1m x 16bit x 4 banks mobile sdram in 54fbga. The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with

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K4S641633H-L 16Bit Banks Mobile SDRAM 54FBGA Samsung semiconductor